| PART |
Description |
Maker |
| IDT70T3539MS133BCGI |
512K X 36 DUAL-PORT SRAM, 15 ns, PBGA256
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| AS7C34096A AS7C34096A-20TIN AS7C34096A-10JC AS7C34 |
SRAM - 3.3V Fast Asynchronous
DUAL MONOSTABLE MULTIVIBRATORS 16-SOIC -40 to 85
DUAL MONOSTABLE MULTIVIBRATORS 16-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO36
DUAL MONOSTABLE MULTIVIBRATORS 16-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44
DUAL MONOSTABLE MULTIVIBRATORS 16-TVSOP -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO44
DUAL MONOSTABLE MULTIVIBRATORS 16-SO -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO44
3.3V 512K x 8 CMOS SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
ALLIANCE MEMORY INC
|
| CM0-67132L-30SHXXX CM4K-67132L-30 CM0-67132L-30SHX |
2K X 8 DUAL-PORT SRAM, 30 ns, UUC48
2K X 8 DUAL-PORT SRAM, 30 ns, CQCC48
2K X 8 DUAL-PORT SRAM, 35 ns, CQCC48
2K X 8 DUAL-PORT SRAM, 35 ns, CQFP64
2K X 8 DUAL-PORT SRAM, 35 ns, UUC48
2K X 8 DUAL-PORT SRAM, 45 ns, CQFP48
|
TEMIC SEMICONDUCTORS
ATMEL CORP
|
| CY7C0241E-15AXI CY7C0241E-25AXC CY7C0241E-15AXC CY |
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY
4K X 18 DUAL-PORT SRAM, 15 ns, PQFP100
8K X 18 DUAL-PORT SRAM, 15 ns, PQFP100
|
CYPRESS SEMICONDUCTOR CORP
|
| IDT7132SA100L48I IDT71321SA55TF IDT7142LA35CI IDT7 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 55 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 25 ns, PQFP64
P-Channel 1.8V Specified PowerTrench MOSFET 2K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 20 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 高K × 8双端口静态RAM的中
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
http://
|
| AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 |
512K x 8 SRAM SRAM MEMORY ARRAY
512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32
512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 12 ns, CDIP32
512K X 8 STANDARD SRAM, 25 ns, CQCC32
512K X 8 STANDARD SRAM, CDSO32
512K X 8 STANDARD SRAM, 15 ns, CDSO32
512K X 8 STANDARD SRAM, 12 ns, CDFP32
|
Austin Semiconductor, Inc
Micross Components
AUSTIN SEMICONDUCTOR INC
|
| IDT7134LA35CI IDT7134LA55FI |
HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM 4K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT70261L20PFI IDT70261S_L IDT70261L55PF IDT70261L |
HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
250V N-Channel MOSFET 16K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT 16K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
16K x 16 Dual-Port RAM w/Int
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT70V7519S133DRG 70V7519S166BC8 70V7519S133BF |
256K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
256K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
256K X 36 DUAL-PORT SRAM, 15 ns, PBGA208
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT70T35L25BFI IDT70T24L25PFI IDT70T24L20PFI IDT70 |
HIGH-SPEED 2.5V 8/4K x 18 DUAL-PORT 8/4K x 16 DUAL-PORT STATIC RAM
JFET-Input Operational Amplifier 8-PDIP 0 to 70 8K X 18 DUAL-PORT SRAM, 25 ns, PBGA100
|
Integrated Device Techn...
Integrated Device Technology, Inc.
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
